MOSFET devices have considerable "Miller capacitance" between their gate and drain terminals. In low voltage applications this gate-drain capacitance is rarely a concern because the Miller effect is dependent of the VDS.
A potential problem occurs when the drain voltage of the bottom device rises very quickly due to turn on of the top MOSFET. This high rate of rise of voltage couples capacitively to the gate of the MOSFET via the Miller capacitance. This can cause the gate voltage of the bottom MOSFET to rise resulting in turn on of this device as well. A shoot-through condition exists and MOSFET failure is certain if not immediate.